The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Aug. 31, 2016
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Ralf Otremba, Kaufbeuren, DE;

Klaus Schiess, Allensbach, DE;

Oliver Häberlen, Villach, AT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/00 (2006.01); H01L 23/495 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 24/40 (2013.01); H01L 21/4825 (2013.01); H01L 23/49513 (2013.01); H01L 23/49562 (2013.01); H01L 23/49568 (2013.01); H01L 23/49575 (2013.01); H01L 2224/40137 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/30107 (2013.01);
Abstract

A method of manufacturing an electronic component includes applying solder paste to at least one electrically conductive portion of a package, applying a high-voltage depletion-mode transistor onto the solder paste, applying a low-voltage enhancement-mode transistor onto the solder paste, applying solder paste onto the high-voltage depletion-mode transistor, applying solder paste onto the low-voltage enhancement-mode transistor, applying an electrically conductive member onto the solder paste on the high-voltage depletion-mode transistor and onto the solder paste on the low-voltage enhancement-mode transistor to form an assembly, and heat treating the assembly to produce an electrical connection between the high-voltage depletion-mode transistor and the low-voltage enhancement-mode transistor via the electrically conductive member.


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