The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Nov. 26, 2013
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 21/78 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); B23K 26/40 (2014.01); B23K 26/402 (2014.01); B23K 26/364 (2014.01); B23K 103/08 (2006.01); B23K 103/16 (2006.01); B23K 103/00 (2006.01); B23K 103/10 (2006.01); B23K 103/12 (2006.01); B23K 103/14 (2006.01); B23K 103/18 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); B23K 26/364 (2015.10); B23K 26/40 (2013.01); B23K 26/402 (2013.01); H01L 21/561 (2013.01); H01L 21/78 (2013.01); H01L 23/3114 (2013.01); H01L 24/19 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); B23K 2203/08 (2013.01); B23K 2203/10 (2013.01); B23K 2203/12 (2013.01); B23K 2203/14 (2013.01); B23K 2203/172 (2015.10); B23K 2203/26 (2015.10); B23K 2203/30 (2015.10); H01L 21/568 (2013.01); H01L 2223/54433 (2013.01); H01L 2224/12105 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract
A method of manufacturing a semiconductor device package includes encapsulating at least partially a plurality of semiconductor chips with encapsulating material to form an encapsulation body. The encapsulation body has a first main surface and a second main surface. At least one of a metal layer and an organic layer is formed over the first main surface of the encapsulation body. At least one trace of the at least one of the metal layer and the organic layer is removed by laser ablation. The encapsulation body is then separated into a plurality of semiconductor device packages along the at least one trace.