The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Oct. 13, 2014
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Axel Preusse, Radebeul, DE;

Romy Liske, Dresden, DE;

Marcus Wislicenus, Muegeln OT Niedergosein, DE;

Robert Krause, Dresden, DE;

Lukas Gerlich, Dresden, DE;

Benjamin Uhlig, Dresden, DE;

Sascha Bott, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 21/288 (2006.01); C25D 7/12 (2006.01); C23C 18/16 (2006.01); C23C 18/54 (2006.01); C25D 3/38 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53252 (2013.01); C23C 18/1653 (2013.01); C23C 18/54 (2013.01); C25D 7/123 (2013.01); H01L 21/288 (2013.01); H01L 21/2885 (2013.01); H01L 21/28556 (2013.01); H01L 21/76843 (2013.01); H01L 21/76873 (2013.01); H01L 21/76874 (2013.01); H01L 21/76877 (2013.01); H01L 23/53238 (2013.01); C25D 3/38 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method includes providing a semiconductor structure including a recess. The recess includes at least one of a contact via and a trench. A layer of a first metal is deposited over the semiconductor structure. An electroless deposition process is performed. The electroless deposition process removes a first portion of the layer of first metal from the semiconductor structure and deposits a first layer of a second metal over the semiconductor structure. An electroplating process is performed. The electroplating process deposits a second layer of the second metal over the first layer of second metal. A second portion of the layer of first metal remains in the semiconductor structure.


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