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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9620429 B1

PDFFull Text
Date of Patent:
Apr. 11, 2017

Filed:

May. 24, 2016

Semiconductor apparatus, stacked semiconductor apparatus, encapsulated stacked-semiconductor apparatus, and method for manufacturing the same

Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Kyoko Soga, Annaka, JP;

Satoshi Asai, Maebashi, JP;

Katsuya Takemura, Jyoetsu, JP;

Assignee:

SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Michael Shingleton

Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 23/29 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 21/56 (2006.01); G03F 7/20 (2006.01); G03F 7/40 (2006.01); G03F 7/075 (2006.01); C08G 59/32 (2006.01); C08G 59/62 (2006.01); C08K 5/13 (2006.01); C08L 63/00 (2006.01); H01L 23/498 (2006.01); C08G 77/52 (2006.01); C08G 77/60 (2006.01); C09D 183/14 (2006.01); C09D 183/16 (2006.01); H01L 21/48 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/296 (2013.01); C08G 59/3281 (2013.01); C08G 59/621 (2013.01); C08G 77/52 (2013.01); C08G 77/60 (2013.01); C08K 5/13 (2013.01); C08L 63/00 (2013.01); C09D 183/14 (2013.01); C09D 183/16 (2013.01); G03F 7/0757 (2013.01); G03F 7/20 (2013.01); G03F 7/40 (2013.01); H01L 21/4853 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/06182 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/16145 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06565 (2013.01); H01L 2225/06582 (2013.01);
Abstract

The present invention is a semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first photosensitive insulating layer formed on the semiconductor device, and a second photosensitive insulating layer formed on the first photosensitive insulating layer, in which the first and second photosensitive insulating layers are composed of a photo-curable resin composition containing a silicone polymer compound having an epoxy group-containing repeating unit shown by formula (1) and a phenolic hydroxyl group-containing repeating unit shown by formula (2), a photosensitive acid generator, a solvent, and crosslinking agents. There can be provided a semiconductor apparatus that can be easily placed on a circuit board and stacked by forming a fine electrode on the semiconductor device and providing a through electrode outside the semiconductor device.

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