The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Dec. 15, 2015
Jung-gun You, Ansan-si, KR;
Se-wan Park, Seoul, KR;
Seung-woo DO, Yongin-si, KR;
In-won Park, Yongin-si, KR;
Sug-hyun Sung, Yongin-si, KR;
Jung-Gun You, Ansan-si, KR;
Se-Wan Park, Seoul, KR;
Seung-Woo Do, Yongin-si, KR;
In-Won Park, Yongin-si, KR;
Sug-Hyun Sung, Yongin-si, KR;
Abstract
A method for fabricating a semiconductor device is provided. The method includes forming a first fin-shaped pattern including an upper part and a lower part on a substrate, forming a second fin-shaped pattern by removing a part of the upper part of the first fin-shaped pattern, forming a dummy gate electrode intersecting with the second fin-shaped pattern on the second fin-shaped pattern, and forming a third fin-shaped pattern by removing a part of an upper part of the second fin-shaped pattern after forming the dummy gate electrode, wherein a width of the upper part of the second fin-shaped pattern is smaller than a width of the upper part of the first fin-shaped pattern and is greater than a width of an upper portion of the third fin-shaped pattern.