The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Mar. 11, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Wei-Sheng Lei, San Jose, CA (US);

Mohammad Kamruzzaman Chowdhury, Santa Clara, CA (US);

Todd Egan, Fremont, CA (US);

Brad Eaton, Menlo Park, CA (US);

Madhava Rao Yalamanchili, Morgan Hill, CA (US);

Ajay Kumar, Cupertino, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/78 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01); B23K 26/364 (2014.01); B23K 26/40 (2014.01); B23K 26/402 (2014.01); H01L 21/673 (2006.01); H01L 21/687 (2006.01); H01L 21/82 (2006.01); B23K 103/16 (2006.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); B23K 26/364 (2015.10); B23K 26/40 (2013.01); B23K 26/402 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/3085 (2013.01); H01L 21/30655 (2013.01); H01L 21/67069 (2013.01); H01L 21/67196 (2013.01); H01L 21/67207 (2013.01); H01L 21/67383 (2013.01); H01L 21/68707 (2013.01); H01L 21/78 (2013.01); H01L 21/82 (2013.01); B23K 2203/172 (2015.10); B23K 2203/56 (2015.10);
Abstract

Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a laser energy absorbing, non-photodefinable topcoat disposed over a water-soluble base layer disposed over the semiconductor substrate. Because the laser light absorbing material layer is non-photodefinable, material costs associated with conventional photo resist formulations may be avoided. The mask is direct-write patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. Absorption of the mask layer within the laser emission band (e.g., UV band and/or green band) promotes good scribe line quality. The substrate may then be plasma etched through the gaps in the patterned mask to singulate the IC with the mask protecting the ICs during the plasma etch. The soluble base layer of the mask may then be dissolved subsequent to singulation, facilitating removal of the layer.


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