The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Apr. 03, 2015
Asahi Glass Company, Limited, Chiyoda-ku, JP;
Junichi Kageyama, Chiyoda-ku, JP;
Kazuyuki Hayashi, Chiyoda-ku, JP;
Asahi Glass Company, Limited, Chiyoda-ku, JP;
Abstract
A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a substrate and a conductive film formed on the substrate, wherein the conductive film has at least two layers of a lower layer formed on the substrate side and an upper layer formed on the lower layer; the lower layer is a CrN type film which contains Cr and N; the upper layer is a CrON type film which contains Cr, N and O; in the CrN type film, the total content of Cr and N is at least 85 at %, and the compositional atomic ratio of Cr to N is Cr:N=9.5:0.5 to 3:7; in the CrON type film, the total content of Cr, N and O is at least 85 at %, and the compositional atomic ratio of Cr to (N+O) is Cr:(N+O)=9.5:0.5 to 3:7; and the film thickness of the CrON type film is from 0.5 to 3 nm, and the standard deviation of the film thickness distribution of the CrON type film is at most 0.18 nm.