The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Jun. 06, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Yu Chao Lin, Hsin-Chu, TW;
Ming-Ching Chang, Hsin-Chu, TW;
Yuan-Sheng Huang, Taichung, TW;
Jui-Ming Chen, Zhunan Township, TW;
Chao-Cheng Chen, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01); C23C 16/40 (2006.01); C23C 16/509 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); C23C 16/40 (2013.01); C23C 16/401 (2013.01); C23C 16/509 (2013.01); H01J 37/32467 (2013.01); H01J 37/32477 (2013.01); H01J 37/32853 (2013.01); H01J 37/32871 (2013.01); H01J 2237/334 (2013.01);
Abstract
Process chambers and methods of preparing and operating a process chamber are disclosed. In some embodiments, a method of preparing a process chamber for processing a substrate includes: forming a first barrier layer over an element disposed within a cavity of the process chamber, the element comprising an outgassing material; and forming, within the process chamber, a second barrier layer over the first barrier layer.