The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

May. 27, 2015
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Xiaolan Ba, San Jose, CA (US);

Raashina Humayun, Los Altos, CA (US);

Michal Danek, Cupertino, CA (US);

Lawrence Schloss, Palo Alto, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/768 (2006.01); C23C 16/52 (2006.01); C23C 16/458 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28556 (2013.01); C23C 16/455 (2013.01); C23C 16/458 (2013.01); C23C 16/52 (2013.01); H01L 21/28568 (2013.01); H01L 21/76877 (2013.01);
Abstract

Provided herein are methods of depositing bulk tungsten by sequential CVD pulses, such as by alternately pulsing tungsten hexafluoride and hydrogen gas in cycles of temporally separated pulses. Some methods include depositing a tungsten nucleation layer at low pressure followed by deposition of bulk tungsten by sequential CVD to form low stress tungsten films with low fluorine content. Methods described herein may also be performed in combination with non-sequential CVD deposition and fluorine-free tungsten deposition techniques.


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