The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Feb. 01, 2016
United Microelectronics Corp., Hsin-Chu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
The present invention provides a high voltage transistor including a substrate, a first base region having a first conductivity type, and a first doped region, a second doped region, a second base region and a third doped region having a second conductivity type complementary to the first conductivity type. The first base region, the second doped region, the second base region and the third doped region are disposed in the substrate, and the first doped region is disposed in the substrate. The third doped region, the second base region and the second doped region are stacked sequentially, and the doping concentrations of the third doped region, the second base region and the second doped region gradually increase.