The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Sep. 11, 2015
Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;
Hiroyuki Kobayashi, Tokyo, JP;
Tomoyuki Tamura, Tokyo, JP;
Masaki Ishiguro, Tokyo, JP;
Shigeru Shirayone, Tokyo, JP;
Kazuyuki Ikenaga, Tokyo, JP;
Makoto Nawata, Tokyo, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
A plasma processing apparatus includes a stage in a processing chamber where plasma is formed, a wafer to be processed, and an electrode arranged at an upper part of the stage and supplied with power to electrostatically attract and hold the wafer on the stage, and consecutively processing a plurality of wafers one by one. There are plural processing steps of conducting processing using the plasma under different conditions and there are plural periods when formation of plasma is stopped between the processing steps. An inner wall of the processing chamber is coated before starting the processing of any wafer, and voltage supplied to the electrode is changed according to a balance of respective polarities of particles floating and charged in the processing chamber in each period when formation of plasma is stopped.