The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2017

Filed:

Jul. 01, 2013
Applicant:

Tokyo Electron Limited, Minato-ku, JP;

Inventors:

Naoki Matsumoto, Nirasaki, JP;

Chishio Koshimizu, Nirasaki, JP;

Akira Koshiishi, Nirasaki, JP;

Assignee:

TOKYO ELECTRON LIMITED, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01); H01L 21/67 (2006.01); C23F 4/00 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); C23F 4/00 (2013.01); H01J 37/32082 (2013.01);
Abstract

A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.


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