The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Jun. 26, 2015
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Vinayak Rastogi, Albany, NY (US);
Alok Ranjan, Mechanicville, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of patterning a silicon containing ARC (anti-reflective coating) layer underlying a patterned layer is described that includes establishing a flow of a process gas to a plasma processing system, selecting a process condition that increases an etch selectivity of the silicon containing ARC layer relative to the patterned layer, igniting plasma from the process gas using a plasma source in accordance with the process condition, and exposing the substrate to the plasma to extend the feature pattern of the patterned layer into the silicon containing ARC layer. The composition of the process gas and the flow rate(s) of the gaseous constituents in the process gas are selected to adjust the carbon-fluorine content.