The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Feb. 27, 2015
Applicant:
Oerlikon Advanced Technologies Ag, Balzers, LI;
Inventors:
Lorenzo Castaldi, Galgenen, CH;
Martin Kratzer, Feldkirch, AT;
Heinz Felzer, Landquart, CH;
Robert Mamazza, Jr., Buchs, CH;
Bernd Heinz, Buchs, CH;
Assignee:
EVATEC AG, Trubbach, CH;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 29/40 (2006.01); C30B 25/06 (2006.01); C30B 25/18 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); C30B 25/06 (2013.01); C30B 25/186 (2013.01); C30B 29/403 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02491 (2013.01); H01L 21/02631 (2013.01); H01L 21/02661 (2013.01); H01L 21/3065 (2013.01);
Abstract
A method for depositing an aluminium nitride layer on a substrate is provided that comprises: providing a silicon substrate; placing the substrate in a vacuum chamber; conditioning a surface of the substrate by etching and providing a conditioned surface; depositing an aluminum film onto the conditioned surface of the substrate by a sputtering method under an atmosphere of Argon and depositing an epitaxial aluminium nitride layer on the aluminum film by a sputtering method under an atmosphere of Nitrogen and Argon.