The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Nov. 06, 2015
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Jon Henri, West Linn, OR (US);
Dennis M. Hausmann, Lake Oswego, OR (US);
Seshasayee Varadarajan, Lake Oswego, OR (US);
Bhadri N. Varadarajan, Beaverton, OR (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/8244 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/16 (2013.01); H01L 45/06 (2013.01); H01L 45/12 (2013.01); H01L 45/1233 (2013.01); H01L 45/142 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01);
Abstract
Methods of depositing silicon nitride encapsulation layers by atomic layer deposition over memory devices including chalcogenide material are provided herein. Methods include using iodine-containing silicon precursors and depositing thermally using ammonia or hydrazine as a second reactant, or iodine-containing silicon precursors and depositing using a nitrogen-based or hydrogen-based plasma.