The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Jan. 23, 2015
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/161 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/28079 (2013.01); H01L 21/28088 (2013.01); H01L 29/161 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/66356 (2013.01); H01L 29/66666 (2013.01); H01L 29/66977 (2013.01); H01L 29/7391 (2013.01);
Abstract
In a particular embodiment, an apparatus includes an electron tunnel structure. The electron tunnel structure includes a tunneling layer, a channel layer, a source layer, and a drain layer. The tunneling layer and the channel layer are positioned between the source layer and the drain layer. The transistor device further includes a high-k dielectric layer adjacent to the electron tunnel structure.