The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2017

Filed:

Sep. 09, 2014
Applicant:

Nxp B.v., Eindhoven, DE;

Inventors:

Guido Albermann, Hamburg, DE;

Sascha Moeller, Hamburg, DE;

Thomas Rohleder, Hamburg, DE;

Martin Lapke, Hamburg, DE;

Hartmut Buenning, Hamburg, DE;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 23/544 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 21/6836 (2013.01); H01L 21/78 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68336 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Consistent with an example embodiment, a method for preparing integrated circuit (IC) device die from a wafer substrate having a front-side with active devices and a back-side, comprises mounting the front-side of the wafer onto protective foil. A laser is applied to saw lane areas on the backside of the wafer, at a first focus depth to define a modification zone; the modification zone defined at a pre-determined depth within active device boundaries and the active device boundaries defined by the saw lane areas. The protective foil is stretched to separate IC device die from one another and expose active device side-walls. With dry-etching of the active device side-walls, the modification zone is substantially removed.


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