The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Feb. 17, 2009
Applicants:
Yu-chung Chen, Hsinchu, TW;
Hsin-fang Su, Hsinchu, TW;
Shih-chang Tsai, Hsinchu, TW;
Inventors:
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 21/31116 (2013.01); Y10T 428/24802 (2015.01);
Abstract
The invention is directed to a method for patterning a material layer. The method comprises steps of providing a material layer having a first hard mask layer and a second hard mask layer successively formed thereon and then patterning the second hard mask layer. Thereafter, an etching process is performed to pattern the first hard mask layer by using the patterned second hard mask layer as a mask, and the etching process is performed with a power of about 1000 W. Next, the material layer is patterned by using the patterned first hard mask layer as a mask.