The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2017

Filed:

Nov. 17, 2015
Applicant:

Kla-tencor Corporation, Milpitas, CA (US);

Inventor:

Steven R. Lange, Alamo, CA (US);

Assignee:

KLA-Tencor Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01); G01N 21/956 (2006.01); G01N 21/88 (2006.01); G01N 21/95 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G01N 21/8806 (2013.01); G01N 21/9501 (2013.01); G01N 21/956 (2013.01); G03F 7/70633 (2013.01); G01N 2021/8845 (2013.01); G01N 2021/8848 (2013.01);
Abstract

Disclosed are methods and apparatus for inspecting semiconductor samples. On an inspection tool, a plurality of different wavelength ranges is selected for different layers of interest of one or more semiconductor samples based on whether such different layers of interest have an absorber type material present within or near such different layers of interest. On the inspection tool, at least one incident beam is directed at the different wavelength ranges towards the different layers of interest and, in response, output signals or images are obtained for each of the different layers of interest. The output signals or images from each of the different layers of interest are analyzed to detect defects in such different layers of interest.


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