The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Jun. 29, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Inventors:
Wei-Fan Lee, Hsinchu, TW;
Chee-Wee Liu, Taipei, TW;
Chin-Kun Wang, Hsinchu, TW;
Yuh-Ta Fan, Hsinchu, TW;
Chih-Hsiung Huang, Kaohsiung, TW;
Tzu-Yao Lin, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/336 (2006.01); H01L 21/3205 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 29/513 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/401 (2013.01); H01L 29/42364 (2013.01); H01L 29/42372 (2013.01); H01L 29/517 (2013.01); H01L 29/78 (2013.01);
Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and an interfacial layer formed over the substrate. The semiconductor structure further includes a gate structure formed over the interfacial layer. In addition, the interfacial layer is made of metal germanium oxide, metal silicon oxide, or metal germanium silicon oxide and is in direct contact with a top surface of the substrate.