The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Jun. 06, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chung-Yen Chou, Hsinchu, TW;
Po-Ken Lin, Hsinchu, TW;
Chia-Shiung Tsai, Hsinchu, TW;
Ru-Liang Lee, Hsinchu, TW;
Abstract
A method of manufacturing a capacitive device. The method includes doping a substrate to form a well region, forming M shoulder portions and (M−1) trenches in the substrate, depositing (M−1) sets of stacked layers along an upper surface of each shoulder portion of the M shoulder portions, sidewalls of the (M−1) trenches, and a bottom surface of each trench of the (M−1) trenches, and etching a plurality of contact holes variously exposing the well region or conductive layers of the (M−1) sets of stacked layers by N patterned masks. An m-th trench of the (M−1) trenches is between an m-th shoulder portion and an (m+1)-th shoulder portion of the M shoulder portions. M is a positive integer equal to or greater than 2 and m is a positive integer from 1 to (M−1). N is a positive integer less than M. Each contact hole of the plurality of contact holes is directly on or above a corresponding shoulder portion of the M shoulder portions.