The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2017

Filed:

May. 04, 2015
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Hanna Bamnolker, Cupertino, CA (US);

Raashina Humayun, Los Altos, CA (US);

Juwen Gao, San Jose, CA (US);

Michal Danek, Cupertino, CA (US);

Joshua Collins, Sunnyvale, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/285 (2006.01); C23C 16/52 (2006.01); C23C 16/04 (2006.01); C23C 16/14 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); C23C 16/045 (2013.01); C23C 16/14 (2013.01); C23C 16/45523 (2013.01); C23C 16/52 (2013.01); H01L 21/28556 (2013.01); H01L 21/28562 (2013.01); H01L 21/28568 (2013.01); H01L 21/76876 (2013.01);
Abstract

Methods for forming tungsten film using fluorine-free tungsten precursors such as tungsten chlorides are provided. Methods involve depositing a tungsten nucleation layer by exposing a substrate to a reducing agent such as diborane (BH) and exposing the substrate to a tungsten chloride, followed by depositing bulk tungsten by exposing the substrate to a tungsten chloride and a reducing agent. Methods also involve diluting the reducing agent and exposing the substrate to a fluorine-free precursor in pulses to deposit a tungsten nucleation layer. Deposited films exhibit good step coverage and plugfill.


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