The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2017

Filed:

Apr. 17, 2014
Applicant:

Veeco Instruments Inc., Plainview, NY (US);

Inventors:

Michael Murphy, Somerset, NJ (US);

Richard Hoffman, Clinton, NJ (US);

Jonathan Cruel, Plano, TX (US);

Lev Kadinski, Burghausen, DE;

Jeffrey C. Ramer, Sunnyvale, CA (US);

Eric A. Armour, Pennington, NJ (US);

Assignee:

Veeco Instruments Inc., Plainview, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/14 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C30B 25/16 (2006.01); C30B 25/08 (2006.01); C30B 25/12 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
C30B 25/14 (2013.01); C23C 16/455 (2013.01); C23C 16/458 (2013.01); C23C 16/4584 (2013.01); C23C 16/45563 (2013.01); C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); C23C 16/45578 (2013.01); C23C 16/52 (2013.01); C30B 25/08 (2013.01); C30B 25/12 (2013.01); C30B 25/165 (2013.01);
Abstract

In a rotating disk reactor () for growing epitaxial layers on substrate (), gas directed toward the substrates at different radial distances from the axis of rotation of the disk has substantially the same velocity. The gas directed toward portions of the disk remote from the axis () may include a higher concentration of a reactant gas () than the gas directed toward portions of the disk close to the axis (), so that portions of the substrate surfaces at different distances from the axis () receive substantially the same amount of reactant gas () per unit area. A desirable flow pattern is achieved within the reactor while permitting uniform deposition and growth of epitaxial layers on the substrate.


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