The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Jan. 15, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yu-Wei Chang, Hsinchu, TW;
Austin Hsu, New Taipei, TW;
Kung-Wei Lee, New Taipei, TW;
Chui-Ya Peng, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 27/112 (2006.01); H01L 21/48 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); H01L 21/485 (2013.01); H01L 23/5258 (2013.01);
Abstract
Semiconductor devices and manufacturing methods of the same are disclosed. The semiconductor device includes a die, a conductive structure, a bonding pad and a passivation layer. The conductive structure is over and electrically connected to the die. The bonding pad is over and electrically connected to the conductive structure. The passivation layer is over the bonding pad, wherein the passivation layer includes a nitride-based layer with a refractive index of about 2.16 to 2.18.