The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2017

Filed:

Jul. 17, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Tsung-Yuan Yu, Taipei, TW;

Hao-Yi Tsai, Hsinchu, TW;

Chao-Wen Shih, Hsinchu County, TW;

Wen-Hsin Chan, Hsinchu County, TW;

Chen-Chih Hsieh, Miaoli County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/60 (2006.01); H01L 21/28 (2006.01); H01L 23/58 (2006.01); H01L 23/10 (2006.01); H01L 23/552 (2006.01); H01L 23/544 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 23/585 (2013.01); H01L 21/565 (2013.01); H01L 23/3114 (2013.01); H01L 23/3135 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 23/525 (2013.01); H01L 23/5226 (2013.01); H01L 24/02 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/94 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02377 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/1191 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/14131 (2013.01); H01L 2224/14136 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/94 (2013.01); H01L 2924/14 (2013.01);
Abstract

A semiconductor device includes a substrate defined with a seal ring region and a circuit region, the substrate includes a seal ring structure and an integrated circuit structure, the seal ring structure is disposed in the seal ring region and includes a plurality of stacked conductive layers interconnected by a plurality of via layers, the integrated circuit structure is disposed in the circuit region and includes an active or a passive device; a metal pad disposed over the seal ring region and contacted with the seal ring structure; a passivation layer disposed over the substrate and covering the metal pad; a polymeric layer disposed over the passivation layer and the circuit region; and a molding disposed over the passivation layer and the polymeric layer, wherein the seal ring structure is covered by the molding.


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