The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2017

Filed:

Mar. 18, 2013
Applicant:

Stats Chippac, Ltd., Singapore, SG;

Inventors:

Reza A. Pagaila, Tangerang, ID;

Dioscoro A. Merilo, Singapore, SG;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/488 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/495 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/538 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/4832 (2013.01); H01L 21/56 (2013.01); H01L 21/561 (2013.01); H01L 23/495 (2013.01); H01L 23/49575 (2013.01); H01L 23/49582 (2013.01); H01L 23/5384 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/16 (2013.01); H01L 24/97 (2013.01); H01L 25/105 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/97 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18161 (2013.01);
Abstract

A semiconductor device has a base substrate with first and second opposing surfaces. A first etch-resistant conductive layer is formed over the first surface of the base substrate. A second etch-resistant conductive layer is formed over the second surface of the base substrate. A first semiconductor die has bumps formed over contact pads on an active surface of the first die. The first die is mounted over a first surface of the first conductive layer. An encapsulant is deposited over the first die and base substrate. A portion of the base substrate is removed to form electrically isolated base leads between opposing portions of the first and second conductive layers. A second semiconductor die is mounted over the encapsulant and a second surface of the first conductive layer between the base leads. A height of the base leads is greater than a thickness of the second die.


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