The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Aug. 18, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hsien-Chang Wu, Taichung, TW;
Li-Lin Su, Taichung County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure involves a method of fabricating a semiconductor device in a semiconductor technology node that is 5-nanometer or smaller. An opening is formed that extends through a plurality of layers over a substrate. A barrier layer is formed on surfaces of the opening. A liner layer is formed over the barrier layer in the opening. The barrier layer and the liner layer have different material compositions. The opening is filled with a non-copper metal material. The non-copper material is formed over the liner layer. In some embodiments, the non-copper metal material includes cobalt.