The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Dec. 19, 2013
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Hanna Bamnolker, Cupertino, CA (US);
Raashina Humayun, Fremont, CA (US);
Deqi Wang, San Jose, CA (US);
Yan Guan, Cupertino, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/285 (2006.01); C23C 16/14 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28556 (2013.01); C23C 16/0209 (2013.01); C23C 16/0281 (2013.01); C23C 16/045 (2013.01); C23C 16/14 (2013.01); C23C 16/45523 (2013.01); H01L 21/76843 (2013.01); H01L 21/76864 (2013.01); H01L 21/76876 (2013.01); H01L 21/76877 (2013.01);
Abstract
Methods for depositing extremely low resistivity tungsten in semiconductor processing are disclosed herein. Methods involve annealing the substrate at various times during the tungsten deposition process to achieve uniform tungsten layers with substantially lower resistivity.