The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Apr. 29, 2016
Rudolph Technologies, Inc., Wilmington, MA (US);
David S. Marx, Newbury Park, CA (US);
David L. Grant, Newbury Park, CA (US);
Rudolph Technologies, Inc., Wilmington, MA (US);
Abstract
A system () for directly measuring the depth of a high aspect ratio etched feature on a wafer () that includes an etched surface () and a non-etched surface (). The system () utilizes an infrared reflectometer () that in a preferred embodiment includes a swept laser (), a fiber circulator (), a photodetector () and a combination collimator () and an objective lens (). From the objective lens () a focused incident light () is produced that is applied to the non-etched surface () of the wafer (). From the wafer () is produced a reflected light () that is processed through the reflectometer () and applied to an ADC () where a corresponding digital data signal () is produced. The digital data signal () is applied to a computer () that, in combination with software (), measures the depth of the etched feature that is then viewed on a display ().