The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2017

Filed:

Jul. 24, 2013
Applicant:

Asm International N.v., Almere, NL;

Inventors:

Suvi P. Haukka, Helsinki, FI;

Marko J. Tuominen, Helsinki, FI;

Antti Rahtu, Helsinki, FI;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/08 (2006.01); C23C 16/02 (2006.01); C23C 16/18 (2006.01); C23C 16/455 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
C23C 16/08 (2013.01); C23C 16/0218 (2013.01); C23C 16/18 (2013.01); C23C 16/45525 (2013.01); H01L 21/28562 (2013.01);
Abstract

The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.


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