The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Dec. 07, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Yuan-Hsiang Chang, Hsinchu, TW;
Yi-Shan Chiu, Taoyuan, TW;
Chih-Chien Chang, Hsinchu, TW;
Jianjun Yang, Singapore, SG;
Wen-Chuan Chang, New Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A manufacturing method of a semiconductor device includes the following steps. A plurality of select gates are formed on a memory region of a semiconductor substrate. Two charge storage structures are formed between two adjacent select gates. A source region is formed in the semiconductor substrate, and the source region is formed between the two adjacent select gates. An insulation block is formed between the two charge storage structures and formed on the source region. A memory gate is formed on the insulation block, and the memory gate is connected to the two charge storage structures.