The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Dec. 04, 2015
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventor:
Kuang-Wen Liu, Hsinchu, TW;
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 27/105 (2006.01); H01L 27/115 (2006.01); H01L 21/762 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/283 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1052 (2013.01); H01L 21/283 (2013.01); H01L 21/31116 (2013.01); H01L 21/762 (2013.01); H01L 21/768 (2013.01); H01L 27/0207 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01);
Abstract
Provided is a method for fabricating a memory device including forming a stack layer on a substrate, and embedding a plurality of gate pillar structures and a plurality of dielectric pillars in the stack layer. The plurality of gate pillar structures and the plurality of dielectric pillars extend along a same direction and are alternately arranged, so that the stack layer is divided into a plurality of stack structures.
Liu, Kuang-Wen. (2017). Method for fabricating memory device (U.S. Patent No. 9583495). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9583495
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile