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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9583481 B1

PDFFull Text
Date of Patent:
Feb. 28, 2017

Filed:

Sep. 30, 2014

Semiconductor device comprising plurality of conductive portions disposed within wells and a nanowire coupled to conductive portion

Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;

Inventors:

Li-Wei Chu, Hsinchu, TW;

Bo-Ting Chen, Fengyuan, TW;

Wun-Jie Lin, Hsinchu, TW;

Han-Jen Yang, Taipei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu, TW;

Attorney:

Cooper Legal Group, LLC

Primary Examiner:

Shaun Campbell

Assistant Examiner:

Aneta Cieslewicz

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 27/02 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 23/50 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 23/50 (2013.01); H01L 27/0248 (2013.01); H01L 27/088 (2013.01); H01L 29/0649 (2013.01); H01L 29/0676 (2013.01); H01L 29/42392 (2013.01); H01L 29/78642 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a first conductive portion on a first side of a first shallow trench isolation (STI) region. The first conductive portion is formed within a first well having a first conductivity type. The first conductive portion has the first conductivity type. The first conductive portion is connected to an electro static discharge (ESD) circuit. A second conductive portion is on a second side of the first STI region. The second conductive portion is formed within a second well having a second conductivity type. The second conductive portion having the first conductivity type is connected to a first nanowire and an input output I/O port.

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