The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Oct. 22, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Amit Chatterjee, Cupertino, CA (US);

Abhijit Basu Mallick, Fremont, CA (US);

Nitin K. Ingle, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/44 (2006.01); C23C 16/452 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); C23C 16/345 (2013.01); C23C 16/4411 (2013.01); C23C 16/452 (2013.01); C23C 16/45582 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02222 (2013.01); H01L 21/02274 (2013.01);
Abstract

Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ).

Published as:
US2015126045A1; WO2015065790A1; TW201522696A; CN105659366A; KR20160078428A; JP2016536792A; US9583333B2; CN105659366B;

Find Patent Forward Citations

Chatterjee, Amit. (2017). Low temperature silicon nitride films using remote plasma cvd technology (U.S. Patent No. 9583333). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9583333

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…