The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
May. 07, 2014
Tokyo Electron Limited, Tokyo, JP;
Hiroshi Tsujimoto, Miyagi, JP;
Tomoyuki Mizutani, Miyagi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A plasma etching apparatus of the present disclosure etches a substrate by plasma of a processing gas. The plasma etching apparatus includes a processing container; a holding unit configured to hold a substrate; and an electrode plate. The plasma etching apparatus further includes configured to supply the processing gas to a space between the holding unit and the electrode plate and disposed in n (n is a natural number of two or more) regions of the substrate divided concentrically in a radial direction, respectively. In addition, the plasma etching apparatus further includes a high frequency power source configured to supply a high frequency power to at least one of the holding unit and the electrode plate so as to generate plasma. The plasma etching apparatus controls a flow rate of the processing gas.