The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Dec. 10, 2014
Applicant:

Nuflare Technology, Inc., Yokohama, JP;

Inventor:

Hirohito Anze, Kamakura, JP;

Assignee:

NUFLARE TECHNOLOGY, INC., Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/42 (2012.01); G03F 1/50 (2012.01); G03F 1/54 (2012.01); G03F 1/78 (2012.01); G03F 1/26 (2012.01); H01J 37/317 (2006.01); G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
G03F 1/42 (2013.01); G03F 1/26 (2013.01); G03F 1/50 (2013.01); G03F 1/54 (2013.01); G03F 1/78 (2013.01); G03F 9/7053 (2013.01); H01J 37/3174 (2013.01); H01J 2237/2448 (2013.01); H01J 2237/31793 (2013.01);
Abstract

A manufacturing method of a phase shift mask in an embodiment includes: forming a metal layer on a substrate, the metal layer having a first region and a second region, the first region being configured to emit secondary electrons by irradiation with electrons, the second region being configured to emit secondary electrons higher in density than the first region, by the irradiation with electrons; patterning the metal layer to form a main pattern in the first region and an alignment mark in the second region; forming a resist layer on the patterned metal layer; and aligning the substrate using a secondary electron image of the alignment mark.


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