The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Feb. 11, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Vinayak Vishwanath Hassan, Santa Clara, CA (US);

Majeed A. Foad, Sunnyvale, CA (US);

Cara Beasley, Scotts Valley, CA (US);

Ralf Hofmann, Soquel, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/22 (2012.01); G03F 1/38 (2012.01); C23C 16/06 (2006.01); G03F 1/24 (2012.01);
U.S. Cl.
CPC ...
G03F 1/22 (2013.01); C23C 16/06 (2013.01); G03F 1/24 (2013.01); G03F 1/38 (2013.01);
Abstract

An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.


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