The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Nov. 10, 2014
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Hsin-Yi Lu, Taipei, TW;
Jeng-Ho Wang, Hsin-Chu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B81B 1/00 (2006.01); C23F 1/02 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
B81B 1/00 (2013.01); C23F 1/02 (2013.01); H01L 23/53252 (2013.01); H01L 23/5329 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a dielectric layer; forming an aluminum layer on the dielectric layer; forming a platinum layer on the aluminum layer; performing a first etching process to remove part of the platinum layer and part of the aluminum layer for forming a patterned platinum layer; and performing a second etching process to remove part of the aluminum layer exposed by the patterned platinum layer and part of the dielectric layer.