The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Dec. 01, 2014
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Xia Li, San Diego, CA (US);
Jeffrey Junhao Xu, San Diego, CA (US);
Zhongze Wang, San Diego, CA (US);
Bin Yang, San Diego, CA (US);
Xiaonan Chen, San Diego, CA (US);
Yu Lu, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 29/788 (2006.01); H01L 21/02 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); H01L 21/02181 (2013.01); H01L 21/28273 (2013.01); H01L 21/28291 (2013.01); H01L 29/4966 (2013.01); H01L 29/516 (2013.01); H01L 29/517 (2013.01); H01L 29/6684 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/66825 (2013.01); H01L 29/7851 (2013.01); H01L 29/7883 (2013.01); H01L 29/78391 (2014.09); G11C 16/0408 (2013.01);
Abstract
Non-volatile memory devices and logic devices are fabricated using processes compatible with high dielectric constant/metal gate (HK/MG) processes for increased cell density and larger scale integration. A doped oxide layer, such as a silicon-doped hafnium oxide (HfO) layer, is implemented as a ferroelectric dipole layer in a nonvolatile memory device.