The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2017

Filed:

Mar. 19, 2015
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Matthew Goldman, Folsom, CA (US);

Pranav Kalavade, San Jose, CA (US);

Uday Chandrasekhar, San Jose, CA (US);

Mark A. Helm, Santa Cruz, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/28 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G06F 12/08 (2016.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G06F 12/0875 (2013.01); G11C 16/04 (2013.01); G11C 16/26 (2013.01); G11C 16/3427 (2013.01); G06F 2212/452 (2013.01);
Abstract

This disclosure concerns memory cell sensing. One or more methods include determining a data state of a first memory cell coupled to a first data line, determining a data state of a third memory cell coupled to a third data line, transferring determined data of at least one of the first and the third memory cells to a data line control unit corresponding to a second data line to which a second memory cell is coupled, the second data line being adjacent to the first data line and the third data line, and determining a data state of the second memory cell based, at least partially, on the transferred determined data.


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