The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Jun. 30, 2015
Applicant:
Hermes Microvision Inc., Hsinchu, TW;
Inventors:
You-Jin Wang, Milpitas, CA (US);
Chiyan Kuan, Danville, CA (US);
Chung-Shih Pan, Palo Alto, CA (US);
Assignee:
HERMES MICROVISION INC., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
A61N 5/00 (2006.01); H05F 3/02 (2006.01); H01J 37/02 (2006.01); H01J 37/20 (2006.01); G01N 23/225 (2006.01);
U.S. Cl.
CPC ...
H05F 3/02 (2013.01); G01N 23/2251 (2013.01); H01J 37/026 (2013.01); H01J 37/20 (2013.01); H01J 2237/0041 (2013.01); H01J 2237/0044 (2013.01); H01J 2237/2008 (2013.01); H01J 2237/2811 (2013.01);
Abstract
A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.