The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Nov. 06, 2015
Infineon Technologies Austria Ag, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Franz-Josef Niedernostheide, Muenster, DE;
Anton Mauder, Kolbermoor, DE;
Joachim Weyers, Hoehenkirchen, DE;
Franz Hirler, Isen, DE;
Markus Schmitt, Neubiberg, DE;
Armin Willmeroth, Ausburg, DE;
Björn Fischer, Munich, DE;
Stefan Gamerith, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
In a field-effect semiconductor device, alternating first n-type and p-type pillar regions are arranged in the active area. The first n-type pillar regions are in Ohmic contact with the drain metallization. The first p-type pillar regions are in Ohmic contact with the source metallization. An integrated dopant concentration of the first n-type pillar regions substantially matches that of the first p-type pillar regions. A second p-type pillar region is in Ohmic contact with the source metallization, arranged in the peripheral area and has an integrated dopant concentration smaller than that of the first p-type pillar regions divided by a number of the first p-type pillar regions. A second n-type pillar region is arranged between the second p-type pillar region and the first p-type pillar regions, and has an integrated dopant concentration smaller than that of the first n-type pillar regions divided by a number of the first n-type pillar regions.