The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

Oct. 09, 2015
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Anton Mauder, Kolbermoor, DE;

Reinhard Ploss, Unterhaching, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 23/36 (2006.01); H01L 21/74 (2006.01); H01L 29/06 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01); H01L 29/739 (2006.01); H01L 23/00 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41766 (2013.01); H01L 21/2254 (2013.01); H01L 21/324 (2013.01); H01L 21/743 (2013.01); H01L 23/36 (2013.01); H01L 29/0657 (2013.01); H01L 29/1079 (2013.01); H01L 29/167 (2013.01); H01L 29/41741 (2013.01); H01L 29/456 (2013.01); H01L 29/66333 (2013.01); H01L 29/66666 (2013.01); H01L 29/66712 (2013.01); H01L 29/66734 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 21/2255 (2013.01); H01L 21/2257 (2013.01); H01L 21/3247 (2013.01); H01L 24/05 (2013.01); H01L 29/0653 (2013.01); H01L 29/0878 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05078 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate and a first trench extending into or through the semiconductor substrate from a first side. The first trench is at least partially filled with a conductive material and electrically connected to the semiconductor substrate via a doped semiconductor layer at a sidewall of the first trench. A semiconductor layer adjoins the semiconductor substrate at the first side, and caps the first trench at the first side. A contact is disposed at a second side of the semiconductor substrate opposite to the first side. A method of manufacturing the semiconductor device is also provided.


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