The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Apr. 29, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chen Cheng Chou, Tainan County, TW;
Chung-Ren Sun, Kaohsiung, TW;
Chii-Ming Wu, Taipei, TW;
Cheng-Ta Wu, Chiayi County, TW;
Tzu kai Lin, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Techniques in fabricating a fin field-effect transistor (FinFET) include providing a substrate having a fin structure and forming an isolation region having a top surface with a first surface profile. A dopant species is implanted using a tilt angle to edge portions of the top surface. The edge portions are then removed using an etch process. In this respect, the isolation region is modified to have a second surface profile based on an etching rate that is greater than an etching rate used at other portions of the top surface. The second surface profile has a step height that is smaller than a step height corresponding to the first surface profile. The tilt implantation and etching process can be performed before a gate structure is formed, after the gate structure is formed but before the fin structure is recessed, or after the fin structure is recessed.