The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Aug. 20, 2015
Xu Cheng, Chandler, AZ (US);
Daniel J. Blomberg, Chandler, AZ (US);
Jiang-kai Zuo, Chandler, AZ (US);
Xu Cheng, Chandler, AZ (US);
Daniel J. Blomberg, Chandler, AZ (US);
Jiang-Kai Zuo, Chandler, AZ (US);
NXP USA, INC., Austin, TX (US);
Abstract
Deep trench isolation structures and systems and methods including the same are disclosed herein. The systems include a semiconductor device. The semiconductor device includes a semiconductor body, a device region, and the deep trench isolation structure. The deep trench isolation structure is configured to electrically isolate the device region from other device regions that extend within the semiconductor body. The deep trench isolation structure includes an isolation trench, a dielectric material that extends within the isolation trench, a first semiconducting region, and a second semiconducting region. The methods include methods of operating an integrated circuit device that includes a plurality of semiconductor devices that include the disclosed deep trench isolation structures.