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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9570431 B1

PDFFull Text
Date of Patent:
Feb. 14, 2017

Filed:

Jul. 28, 2015

Semiconductor wafer for integrated packages

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Cheng-Te Lee, Chupei, TW;

Chung-Yi Yu, Hsin-Chu, TW;

Jen-Cheng Liu, Hsin-Chu, TW;

Kuan-Chieh Huang, Hsin-Chu, TW;

Yeur-Luen Tu, Taichung, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Adam S Bowen

Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 29/167 (2006.01); H01L 29/36 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/223 (2006.01); H01L 21/30 (2006.01); H01L 21/768 (2006.01); H01L 21/306 (2006.01); H01L 21/304 (2006.01); H01L 21/283 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/50 (2013.01); H01L 21/0257 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/223 (2013.01); H01L 21/283 (2013.01); H01L 21/30 (2013.01); H01L 21/304 (2013.01); H01L 21/30604 (2013.01); H01L 21/768 (2013.01); H01L 24/11 (2013.01); H01L 24/81 (2013.01); H01L 29/0684 (2013.01); H01L 29/167 (2013.01); H01L 29/36 (2013.01); H01L 2224/16235 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06548 (2013.01);
Abstract

An embodiment semiconductor wafer includes a bottom semiconductor layer having a first doping concentration, a middle semiconductor layer over the bottom semiconductor layer, and a top semiconductor layer over the middle semiconductor layer. The middle semiconductor layer has a second doping concentration greater than the first doping concentration, and the top semiconductor layer has a third doping concentration less than the second doping concentration. A lateral surface of the bottom semiconductor layer is an external surface of the semiconductor wafer, and sidewalls of the bottom semiconductor layer, the middle semiconductor layer, and top semiconductor layer are substantially aligned.

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