The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Apr. 02, 2015
Jeonggi Jin, Seoul, KR;
Byung Lyul Park, Seoul, KR;
Jisoon Park, Suwon-si, KR;
Sukchul Bang, Yongin-si, KR;
Deokyoung Jung, Seoul, KR;
Jeonggi Jin, Seoul, KR;
Byung Lyul Park, Seoul, KR;
Jisoon Park, Suwon-si, KR;
Sukchul Bang, Yongin-si, KR;
Deokyoung Jung, Seoul, KR;
Abstract
Semiconductor devices having through electrodes capped with self-aligned protection layers. The semiconductor device comprises a semiconductor substrate including an integrated circuit formed therein, an interlayer dielectric layer on the semiconductor substrate to cover the integrated circuit, an intermetal dielectric layer having at least one metal line that is provided on the interlayer dielectric layer and is electrically connected to integrated circuit, and a through electrode that vertically penetrates the interlayer dielectric layer and the semiconductor substrate. The through electrode includes a top portion that is capped with a first protection layer capable of preventing a constituent of the through electrode from being diffused away from the through electrode.