The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Dec. 20, 2013
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Universite Joseph Fourier, Grenoble, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
UNIVERSITE JOSEPH FOURIER, Grenoble, FR;
Abstract
A microelectronic method for etching a layer to be etched, including: modifying the layer to be etched from a surface of the layer to be etched and over a depth corresponding to at least a portion of thickness of the layer to be etched to form a film, with the modifying including implanting light ions into the layer to be etched; and removing the film includes a selective etching of the film relative to at least one layer underlying the film.