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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9570317 B1

PDFFull Text
Date of Patent:
Feb. 14, 2017

Filed:

Dec. 20, 2013

Microelectronic method for etching a layer

Applicants:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Centre National DE LA Recherche Scientifique, Paris, FR;

Universite Joseph Fourier, Grenoble, FR;

Inventors:

Nicolas Posseme, Grenoble, FR;

Olivier Joubert, Meylan, FR;

Laurent Vallier, Meylan, FR;

Assignees:

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;

UNIVERSITE JOSEPH FOURIER, Grenoble, FR;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Duy Deo

Assistant Examiner:

Maki Angadi

Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/311 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/0223 (2013.01); H01L 21/02057 (2013.01); H01L 21/266 (2013.01); H01L 21/306 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/32133 (2013.01);
Abstract

A microelectronic method for etching a layer to be etched, including: modifying the layer to be etched from a surface of the layer to be etched and over a depth corresponding to at least a portion of thickness of the layer to be etched to form a film, with the modifying including implanting light ions into the layer to be etched; and removing the film includes a selective etching of the film relative to at least one layer underlying the film.

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Posseme, Nicolas. (2017). Microelectronic method for etching a layer (U.S. Patent No. 9570317). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9570317

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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