The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

Oct. 13, 2015
Applicant:

Utac Headquarters Pte. Ltd., Singapore, SG;

Inventors:

William John Nelson, Singapore, SG;

Nathapong Suthiwongsunthorn, Singapore, SG;

Beng Yeung Ho, Singapore, SG;

Poh Leng Wilson Ong, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/78 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/304 (2006.01); H01L 21/82 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/304 (2013.01); H01L 21/3083 (2013.01); H01L 21/31133 (2013.01); H01L 21/31144 (2013.01); H01L 21/78 (2013.01); H01L 21/82 (2013.01); H01L 23/3114 (2013.01); H01L 24/14 (2013.01);
Abstract

Methods for dicing a wafer is presented. The method includes providing a wafer having first and second major surfaces. The wafer is prepared with a plurality of dies on main device regions and are spaced apart from each other by dicing channels on the first major surface of the wafer. A film is provided over first or second major surface of the wafer. The film covers at least areas corresponding to the main device regions. The method also includes using the film as an etch mask and plasma etching the wafer through exposed semiconductor material of the wafer to form gaps to separate the plurality of dies on the wafer into a plurality of individual dies.


Find Patent Forward Citations

Loading…