The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Dec. 10, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Min Ju Park, Seoul, KR;
Haisub Na, Seoul, KR;
Hyojin Yun, Suwon-si, KR;
Kyoungseon Kim, Suwon-si, KR;
Su Min Kim, Suwon-si, KR;
Hyunwoo Kim, Seongnam-si, KR;
Su-min Park, Ansan-si, KR;
So-Ra Han, Bucheon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.